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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
February 2007
FRFET
FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
Features
* 9A, 600V, RDS(on) = 0.8 @VGS = 10 V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D
G GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25C)
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Parameter
FQP10N60CF FQPF10N60CF
600 9.0 5.7
(Note 1)
Units
V A A A V mJ A mJ V/ns
9.0 * 5.7 * 36 * 30
- Continuous (TC = 100C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
(Note 2) (Note 1) (Note 1) (Note 3)
36
583 9.0 16.9 4.5 169 1.35 -55 to +150 300 50 0.4
W W/C C C
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FQP10N60CF FQPF10N60CF
0.74 62.5 2.5 62.5
Units
C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FQP10N60CF / FQPF10N60CF Rev. A
FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQP10N60CF FQPF10N60CF
Device
FQP10N60CF FQPF10N60CF
Package
TO-220 TO-220F
Reel Size
---
Tape Width
---
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
600 ------
-0.7 -----
--10 100 100 -100
V V/C A A nA nA
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 4.5 A VDS = 40 V, ID = 4.5 A
(Note 4)
2.0 ---
-0.61 8.0
4.0 0.8 --
V S
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1570 166 18 2040 215 24 pF pF pF
Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 9.0A, VGS = 10 V
(Note 4, 5) (Note 4, 5)
VDD = 300 V, ID = 9.0A, RG = 25
--------
23 69 144 77 44 6.7 18.5
55 150 300 165 57 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.2mH, IAS = 9.0 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 9.0 A VGS = 0 V, IS = 9.0A, dIF / dt = 100 A/s
(Note 4)
------
---90 0.3
9.0 36 1.4 ---
A A V ns C
2 FQP10N60CF / FQPF10N60CF Rev. A
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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
10
1
10
1
ID, Drain Current [A]
ID, Drain Current [A]
150C
25C
10
0
-55C
10
0
10
-1
* Notes : 1. 250s Pulse Test 2. TC = 25C
* Notes : 1. VDS = 40V
10
-1
2. 250s Pulse Test
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
2.0
RDS(ON) [], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
1.5
10
1
VGS = 10V
1.0
10
0
0.5
VGS = 20V
150C 25C
10
-1
* Notes : 1. VGS = 0V 2. 250s Pulse Test
* Note : TJ = 25C
0.0 0 5 10 15 20 25 30 35
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd
Figure 6. Gate Charge Characteristics
12
2500
Crss = Cgd
Capacitance [pF]
2000
VGS, Gate-Source Voltage [V]
Ciss
10
VDS = 120V VDS = 300V
8
VDS = 480V
1500
Coss
6
1000
* Notes ; 1. VGS = 0 V
4
Crss
500
2. f = 1 MHz
2
* Note : ID = 9.0A
0 -1 10
0
10
0
10
1
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3 FQP10N60CF / FQPF10N60CF Rev. A
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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
* Notes : 1. VGS = 0 V 2. ID = 250A
0.5
* Notes : 1. VGS = 10 V 2. ID = 4.5 A
0.8 -100
-50
0
50
100
150
200
0.0 -100
-50
0
50
100
150
200
TJ, Junction Temperature [C]
TJ, Junction Temperature [C]
Figure 9-1. Maximum Safe Operating Area for FQP10N60C
2
Figure 9-2. Maximum Safe Operating Area for FQPF10N60C
2
10
10
10 s 100 s
10
1
10 s 100 s
10
1
ID, Drain Current [A]
ID, Drain Current [A]
1ms 10ms 100ms DC
Operation in This Area is Limited by R DS(on)
1ms 10ms 100ms
10
0
10
0
Operation in This Area is Limited by R DS(on)
DC
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-2
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
VDS, Drain-SourceVoltage[V]
VDS, Drain-SourceVoltage[V]
Figure 10. Maximum Drain Current vs. Case Temperature
10
8
ID, Drain Current [A]
6
4
2
0 25
50
75
100
o
125
150
TC, Case Temperature [ C]
4 FQP10N60CF / FQPF10N60CF Rev. A
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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP10N60CF
10
0
D=0.5
Z? JC Thermal Response (t),
0.2
10
-1
0.1 0.05 0.02 0.01
PDM t1 t2
10
-2
single pulse
* Notes : 0 1. Z? JC = 0.74 C/W (t) 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC (t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FQPF10N60CF
D=0.5 0.2 0.1
10
-1
10
0
Z? JC Thermal Response (t),
0.05 0.02 0.01
PDM t1 t2
10
-2
single pulse
* Notes : 0 (t) 1. Z? JC = 2.5 C/W 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC (t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1, Square Wave Pulse Duration [sec]
5 FQP10N60CF / FQPF10N60CF Rev. A
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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6 FQP10N60CF / FQPF10N60CF Rev. A
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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7 FQP10N60CF / FQPF10N60CF Rev. A
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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
8 FQP10N60CF / FQPF10N60CF Rev. A
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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
9 FQP10N60CF / FQPF10N60CF Rev. A
15.87 0.20
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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM
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As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I22
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
10 FQP10N60CF / FQPF10N60CF Rev. A
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